NTE261 NPN silicon transistor , darlington power amplifier
The NTE261 is a silicon darlington power transistor in a TO220 type package designed for general purpose amplifier and low–speed switching applications.
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Image for illustrative purpose only

Features:
High DC Current Gain: hFE= 2500 Typ @ IC= 4A
Collector–Emitter Sustaining Voltage: VCEO(sus)= 100V Min @ 100mA
Low Collector–Emitter Saturation Voltage:VCE(sat)= 2V Max @ IC= 3A= 4V Max @ IC= 5A
Monolithic Construction with Built–In Base–Emitter Shunt Resistor

Manufacturer datasheet - NTE261 (Adobe Reader required to read datasheet)